FQP8P10
Manufacturer:
On Semiconductor
Mfr.Part #:
FQP8P10
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole P-Channel number of channels:1 65 W -100 V Continuous Drain Current (ID):8 A 15 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -100 V |
| Length | 10.67 mm |
| Width | 4.7 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 16.3 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | -8 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 65 W |
| Power Dissipation | 65 W |
| Number of Channels | 1 |
| Input capacitance | 470 pF |
| Continuous Drain Current (ID) | 8 A |
| Rds On Max | 530 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Turn-On Delay Time | 11 ns |
| Turn-Off Delay Time | 20 ns |
| Element Configuration | Single |
| Fall Time | 35 ns |
| Rise Time | 110 ns |
| Dual Supply Voltage | -100 V |
| Gate Charge | 15 nC |
| Drain to Source Resistance | 530 mΩ |
| Nominal Vgs | -4 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | -100 V |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | P-Channel |
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